DI065N06PT-Q
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI065N06PT-Q
MOSFET, PowerQFN 3x3, N, 65V, 65A, 5mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI065N06PT-Q
DI065N06PT-Q Single
Type SMD
Package PowerQFN 3x3
Qualification AEC-Q compliant
Config Single
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 65 V
Drain current 25°C ID 65 A
On-resistance 1 RDSon1 0.005 Ω
@ ID 20 A
@ VGS 10 V
Drain current 100°C ID 41 A
On-resistance 2 RDSon2 0.0075 Ω
@ ID 15 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 39 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 300 A
@ tp 10000 µs
Threshold voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-on delay time tD(on) 15 ns
Rise time tr 26 ns
Turn-off delay time tD(off) 15 ns
Fall time tf 3 ns
Total gate charge (10V) Qg (10V) 37 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 10 nC
Single pulse avalanche energy Eas 65 mJ
Input capacitance Ciss 1617 pF
Output capacitance Coss 504 pF
Reverse transfer capacitance Crss 0 pF
Reverse recovery charge Qrr 22 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking 3E6N044
Thermal resistance junction RTH 3.2 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 62.5 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 16 V
Drain source leakage current IDSS 1 µA
@ VDS 54 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 29 mA/V
Intrinsic gate resistance RGi 1.1 Ω

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