DI048N04PT
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI048N04PT
MOSFET, PowerQFN 3x3, N, 40V, 48A, 7.6mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free No
Halogen free No

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Technical data

Article number DI048N04PT
DI048N04PT Single
Type SMD
Package PowerQFN 3x3
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 40 V
Drain current 25°C ID 48 A
On-resistance 1 RDSon1 0.0076 Ω
@ ID 12 A
@ VGS 10 V
Drain current 100°C ID 35 A
On-resistance 2 RDSon2 0.009 Ω
@ ID 10 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 31 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 200 A
@ tp 10000 µs
Threshold voltage VGSth min 1 V
VGSth max 2.5 V
Turn-on delay time tD(on) 17 ns
Rise time tr 30 ns
Turn-off delay time tD(off) 17 ns
Fall time tf 2 ns
Total gate charge (10V) Qg (10V) 48.5 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 10 nC
Single pulse avalanche energy Eas 45 mJ
Input capacitance Ciss 2268 pF
Output capacitance Coss 169 pF
Reverse transfer capacitance Crss 121 pF
Reverse recovery charge Qrr 7 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking Type
Thermal resistance junction RTH 4 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 50 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 20 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 22 mA/V
Intrinsic gate resistance RGi 1.3 Ω

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