DI048N03PTK-Q
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI048N03PTK-Q
MOSFET, PowerQFN 3x3, N, 40V, 48A, 7.6mΩ, 175°C, AEC-Q101
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI048N03PTK-Q
DI048N03PTK-Q Single
Type SMD
Package PowerQFN 3x3
Qualification AEC-Q compliant
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected Yes
Polarity pol N
Drain source voltage VDS 40 V
Drain current 25°C ID 48 A
On-resistance 1 RDSon1 0.0076 Ω
@ ID 10 A
@ VGS 10 V
Drain current 100°C ID 30 A
On-resistance 2 RDSon2 0.0048 Ω
@ ID 12 A
@ VGS 10 V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 37.5 W
@ TLoc 25 °C
Location Contact
Avalanche No
Peak drain current IDM 200 A
@ tp 100 µs
Threshold voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-on delay time tD(on) tbd ns
Rise time tr tbd ns
Turn-off delay time tD(off) tbd ns
Fall time tf tbd ns
Total gate charge (10V) Qg (10V) tbd nC
Total gate charge (4.5V) Qg (4.5V) tbd nC
Gate-drain charge Qgd tbd nC
Single pulse avalanche energy Eas tbd mJ
Input capacitance Ciss tbd pF
Output capacitance Coss tbd pF
Reverse transfer capacitance Crss tbd pF
Reverse recovery charge Qrr tbd nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking Type
Thermal resistance junction RTH 5.4 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 62.5 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 10 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 30 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS tbd V
Forward transconductance gfs tbd mA/V
Intrinsic gate resistance RGi tbd Ω

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