DI045N03PT
MOSFETs (Field Effect Transistors)

Downloads & Links
Technical data
Related products
News and Updates
Application Reference Diagrams
Request sample

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI045N03PT
MOSFET, PowerQFN 3x3, N, 30V, 45A, 4.4mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

Downloads & Links

Distributor Availability

Technical data

Article number DI045N03PT
DI045N03PT Single
Type SMD
Package PowerQFN 3x3
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 30 V
Drain current 25°C ID 45 A
On-resistance 1 RDSon1 0.0044 Ω
@ ID 24 A
@ VGS 10 V
Drain current 100°C ID 30 A
On-resistance 2 RDSon2 0.0068 Ω
@ ID 12 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 16 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 280 A
@ tp 10000 µs
Threshold voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-on delay time tD(on) 18 ns
Rise time tr 54 ns
Turn-off delay time tD(off) 18 ns
Fall time tf 8 ns
Total gate charge (10V) Qg (10V) 53 nC
Total gate charge (4.5V) Qg (4.5V) 26 nC
Gate-drain charge Qgd 13 nC
Single pulse avalanche energy Eas 55 mJ
Input capacitance Ciss 2300 pF
Output capacitance Coss 280 pF
Reverse transfer capacitance Crss 230 pF
Reverse recovery charge Qrr 6 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking 303N040
Thermal resistance junction RTH 8 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 20 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 27 mA/V
Intrinsic gate resistance RGi 1 Ω

News and Updates

  • Filter:

Request sample