DI040N10D1-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI040N10D1-AQ
MOSFET, DPAK, N, 100V, 40A, 17mΩ, 175°C, AEC-Q101
Minimum order quantity 2.500
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI040N10D1-AQ
DI040N10D1-AQ Single
Type SMD
Package TO-252AA/D-PAK
Qualification AEC-Q101
Config Single
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 100 V
Drain current 25°C ID 40 A
On-resistance 1 RDSon1 0.017 Ω
@ ID 28 A
@ VGS 10 V
Drain current 100°C ID 28 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS nul V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 37.5 W
@ TLoc 25 °C
Location Contact
Avalanche No
Peak drain current IDM 160 A
@ tp 10000 µs
Threshold voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-on delay time tD(on) 4.5 ns
Rise time tr 5.5 ns
Turn-off delay time tD(off) 16 ns
Fall time tf 9 ns
Total gate charge (10V) Qg (10V) 15.5 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 3.8 nC
Single pulse avalanche energy Eas 64 mJ
Input capacitance Ciss 1192 pF
Output capacitance Coss 421 pF
Reverse transfer capacitance Crss 34 pF
Reverse recovery charge Qrr 32 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.32 g
Marking Marking Type
Thermal resistance junction RTH 4 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 39 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 20 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 21 mA/V
Intrinsic gate resistance RGi 3.8 Ω

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