DI028P03PT
MOSFETs (Field Effect Transistors)

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI028P03PT
MOSFET, PowerQFN 3x3, P, -30V, -28A, 6.7mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI028P03PT
DI028P03PT Single
Type SMD
Package PowerQFN 3x3
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol P
Drain source voltage VDS -30 V
Drain current 25°C ID -28 A
On-resistance 1 RDSon1 0.0067
@ ID -20 A
@ VGS -10 V
Drain current 100°C ID -17 A
On-resistance 2 RDSon2 0.017
@ ID -20 A
@ VGS -4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 40 W
@ TLoc 25 °C
Location Contact
Avalanche No
Peak drain current IDM -80 A
@ tp 10000 µs
Threshold voltage VGSth min -1 V
VGSth max -2.5 V
Turn-on delay time tD(on) 11 ns
Rise time tr 9 ns
Turn-off delay time tD(off) 24 ns
Fall time tf 12 ns
Total gate charge (10V) Qg (10V) 30 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 10 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 2060 pF
Output capacitance Coss 370 pF
Reverse transfer capacitance Crss 295 pF
Reverse recovery charge Qrr 40 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking tbd
Thermal resistance junction RTH 3.125 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 20 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 25 mA/V
Intrinsic gate resistance RGi tbd

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