DI024N15D1
MOSFETs (Field Effect Transistors)

Downloads & Links
Technical data
News and Updates
Request sample

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI024N15D1
MOSFET, DPAK, N, 150V, 24A, 0.054Ω, 175°C
Minimum order quantity 2.500
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

Downloads & Links

Distributor Availability

Technical data

Article number DI024N15D1
DI024N15D1 Single
Type SMD
Package TO-252AA/D-PAK
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 150 V
Drain current 25°C ID 24 A
On-resistance 1 RDSon1 0.054 Ω
@ ID 9 A
@ VGS 10 V
Drain current 100°C ID 16.9 A
On-resistance 2 RDSon2 0.075 Ω
@ ID 4 A
@ VGS 6 V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 60 W
@ TLoc 25 °C
Location Contact
Avalanche No
Peak drain current IDM 68 A
@ tp 10000 µs
Threshold voltage VGSth min 2 V
VGSth max 4 V
Turn-on delay time tD(on) 11 ns
Rise time tr 3 ns
Turn-off delay time tD(off) 11 ns
Fall time tf 3 ns
Total gate charge (10V) Qg (10V) 23 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 0 nC
Single pulse avalanche energy Eas 49 mJ
Input capacitance Ciss 1123 pF
Output capacitance Coss 82 pF
Reverse transfer capacitance Crss 11 pF
Reverse recovery charge Qrr 160 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.32 g
Marking Marking Type
Thermal resistance junction RTH 2.5 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 40 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 16 V
Drain source leakage current IDSS 1 µA
@ VDS 120 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 17 mA/V
Intrinsic gate resistance RGi 6.9 Ω

News and Updates

  • Filter:

Application Reference Diagrams

No records found.

Request sample