DI017N15PT
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI017N15PT
MOSFET, PowerQFN 3x3, N, 150 V, 17 A, 65 mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI017N15PT
DI017N15PT Single
Type SMD
Package PowerQFN 3x3
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 150 V
Drain current 25°C ID 17 A
On-resistance 1 RDSon1 0.065 Ω
@ ID 2 A
@ VGS 4.5 V
Drain current 100°C ID 11 A
On-resistance 2 RDSon2 0.056 Ω
@ ID 5 A
@ VGS 10 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 39 W
@ TLoc 25 °C
Location Contact
Avalanche No
Peak drain current IDM 30 A
@ tp null µs
Threshold voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-on delay time tD(on) 13 ns
Rise time tr 1 ns
Turn-off delay time tD(off) 13 ns
Fall time tf 3 ns
Total gate charge (10V) Qg (10V) 12.8 nC
Total gate charge (4.5V) Qg (4.5V) 5.5 nC
Gate-drain charge Qgd 13 nC
Single pulse avalanche energy Eas 55 mJ
Input capacitance Ciss 618 pF
Output capacitance Coss 81 pF
Reverse transfer capacitance Crss 7 pF
Reverse recovery charge Qrr 210 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking Type
Thermal resistance junction RTH 3.2 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 60 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 150 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 17 mA/V
Intrinsic gate resistance RGi 2.9 Ω

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