DI006P02PW-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI006P02PW-AQ
MOSFET, PowerQFN 2x2, P, -20V, -6A, 25mΩ, 150°C, AEC-Q101
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI006P02PW-AQ
DI006P02PW-AQ Single
Type SMD
Package PowerQFN 2x2
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 1
 
ESD protection ESD protected No
Polarity pol P
Drain source voltage VDS -20 V
Drain current 25°C ID -6 A
On-resistance 1 RDSon1 0.025 Ω
@ ID -6 A
@ VGS -5 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 0.035 Ω
@ ID -5 A
@ VGS -2.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 2 W
@ TLoc 25 °C
Location ambient
Avalanche No
Peak drain current IDM -36 A
@ tp 10000 µs
Threshold voltage VGSth min -0.4 V
VGSth max -1 V
Turn-on delay time tD(on) 10 ns
Rise time tr 34 ns
Turn-off delay time tD(off) 21 ns
Fall time tf 7 ns
Total gate charge (10V) Qg (10V) 10 nC
Total gate charge (4.5V) Qg (4.5V) 13 nC
Gate-drain charge Qgd 3 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 1242 pF
Output capacitance Coss 188 pF
Reverse transfer capacitance Crss 148 pF
Reverse recovery charge Qrr 2 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.05 g
Marking Marking NQ
Thermal resistance junction RTH 75 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 50 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 9 mA/V
Intrinsic gate resistance RGi null Ω

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