DI005N06SQ2
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI005N06SQ2
MOSFET, SO-8, N+N, 60V, 5A, 40mΩ, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI005N06SQ2
DI005N06SQ2 Dual
Type SMD
Package SO-8
Qualification Industrial Grade
Config Dual
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N+N
Drain source voltage VDS 60 V
Drain current 25°C ID 5 A
On-resistance 1 RDSon1 0.04 Ω
@ ID 4.5 A
@ VGS 10 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 0.055 Ω
@ ID 3.5 A
@ VGS 5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 1.7 W
@ TLoc 25 °C
Location null
Avalanche No
Peak drain current IDM 30 A
@ tp 10 µs
Threshold voltage VGSth min 1 V
VGSth max 3 V
Turn-on delay time tD(on) 7 ns
Rise time tr 8 ns
Turn-off delay time tD(off) 20 ns
Fall time tf 4 ns
Total gate charge (10V) Qg (10V) 22 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 3 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 1295 pF
Output capacitance Coss 65 pF
Reverse transfer capacitance Crss 40 pF
Reverse recovery charge Qrr 12 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking Type
Thermal resistance junction RTH 75 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 18 V
Drain source leakage current IDSS 0.1 µA
@ VDS 60 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 4.5 mA/V
Intrinsic gate resistance RGi null Ω

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