DI005C04PTK
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI005C04PTK
MOSFET, PowerQFN 3x3-Dual, N+P, 40V, 5A, 3.5mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI005C04PTK
DI005C04PTK Dual
Type SMD
Package PowerQFN 3x3-Dual
Qualification Industrial Grade
Config Dual
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected Yes
Polarity pol N+P
Drain source voltage VDS 40 V
Drain current 25°C ID 5 A
On-resistance 1 RDSon1 0.0035 Ω
@ ID 2.5 A
@ VGS 10 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 0.052 Ω
@ ID 2.5 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 12.5 W
@ TLoc 25 °C
Location null
Avalanche No
Peak drain current IDM 20 A
@ tp null µs
Threshold voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-on delay time tD(on) 8.3 ns
Rise time tr 11 ns
Turn-off delay time tD(off) 7.4 ns
Fall time tf 9 ns
Total gate charge (10V) Qg (10V) 12 nC
Total gate charge (4.5V) Qg (4.5V) 5.6 nC
Gate-drain charge Qgd 1.6 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 672 pF
Output capacitance Coss 44 pF
Reverse transfer capacitance Crss 21 pF
Reverse recovery charge Qrr 3.5 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking Type
Thermal resistance junction RTH 11 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 90 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 10 µA
@ VGS 16 V
Drain source leakage current IDSS 1 µA
@ VDS 32 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs null mA/V
Intrinsic gate resistance RGi null Ω

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