BD157
Bipolar Transistors

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Product information

Product family Bipolar Transistors
Control and signal processing
Article description BD157
BJT, TO-126, 250V, 500mA, NPN, 20W, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free No
Halogen free No

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Technical data

Article number BD157
BD157 Single
Type SMD
Package TO-126
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
Collector Emitter voltage VCEO 250 V
DC Collector current IC 3000 mA
Polarity pol NPN
Power dissipation Ptot 20 W
@ TLoc 25 °C
Location Junction
DC current gain hfe 240
@ VCE 10 V
@ IC 50 mA
DC current gain (b) hfe null
@ VCE null V
@ IC null mA
DC current gain (c) hfe null
@ VCE null V
@ IC null mA
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Peak Collector Current ICM null A
Peak Base current IBM null mA
Collector Base voltage VCBO 275 V
Emitter Base voltage VEBO 5 V
Collector saturation voltage VCEsat null mV
@ IC null mA
@ IB null mA
Base saturation voltage VBEsat null V
@ IC null mA
@ IB null mA
Base Emitter voltage VBE null V
Collector Base cutoff current ICBO 100000 nA
Emitter Base cutoff current IEBO 100000 nA
Gain bandwidth product ft null MHz
@ IC null mA
@ VCE null V
@ f null MHz
Marking Marking Type
Thermal resistance junction RTH null K/W
Location null
Thermal resistance junction (b) RTH null K/W
Location null
Net weight mnet TBA g
Case flammability UL94-V0 Yes
UL recognized UL-Recognition null
Collector Base capacitance CCBO null pF
@ VCB null V
Storage temperature Tsmin -55 °C
Tsmax 150 °C

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