BD157
Bipolar Transistors

Product information

Product family	Bipolar Transistors Control and signal processing
Article description	BD157 BJT, TO-126, 250V, 500mA, NPN, 20W, 150°C
Minimum order quantity	4.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	No
Halogen free	No

Article number	BD157

Type	SMD
Package	TO-126
Qualification	Industrial Grade
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

Collector Emitter voltage	VCEO	250 V
DC Collector current	IC	3000 mA
Polarity	pol	NPN

Power dissipation	Ptot	20 W
	@ TLoc	25 °C
	Location	Junction
DC current gain	hfe	240
	@ VCE	10 V
	@ IC	50 mA
DC current gain (b)	hfe	null
	@ VCE	null V
	@ IC	null mA
DC current gain (c)	hfe	null
	@ VCE	null V
	@ IC	null mA
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Peak Collector Current	ICM	null A
Peak Base current	IBM	null mA
Collector Base voltage	VCBO	275 V
Emitter Base voltage	VEBO	5 V
Collector saturation voltage	VCEsat	null mV
	@ IC	null mA
	@ IB	null mA
Base saturation voltage	VBEsat	null V
	@ IC	null mA
	@ IB	null mA
Base Emitter voltage	VBE	null V
Collector Base cutoff current	ICBO	100000 nA
Emitter Base cutoff current	IEBO	100000 nA
Gain bandwidth product	ft	null MHz
	@ IC	null mA
	@ VCE	null V
	@ f	null MHz
Marking	Marking	Type
Thermal resistance junction	RTH	null K/W
	Location	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Net weight	mnet	TBA g
Case flammability	UL94-V0	Yes
UL recognized	UL-Recognition	null
Collector Base capacitance	CCBO	null pF
	@ VCB	null V
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C