2N3906
Bipolar Transistors

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Product information

Product family Bipolar Transistors
Control and signal processing
Article description 2N3906
BJT, TO-92, 40V, 200mA, PNP, 0.625W, 150°C
Minimum order quantity 4.000
Stock 140.000
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number 2N3906
2N3906 Single
Type Wire-lead
Package TO-92
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL n/a
 
Collector Emitter voltage VCEO -40 V
DC Collector current IC -600 mA
Polarity pol PNP
Power dissipation Ptot 0.625 W
@ TLoc 25 °C
Location ambient
DC current gain hfe 100
@ VCE -1 V
@ IC -10 mA
DC current gain (b) hfe 80
@ VCE 1 V
@ IC 1 mA
DC current gain (c) hfe 60
@ VCE 1 V
@ IC 0.1 mA
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Peak Collector Current ICM null A
Peak Base current IBM null mA
Collector Base voltage VCBO null V
Emitter Base voltage VEBO 5 V
Collector saturation voltage VCEsat -400 mV
@ IC -50 mA
@ IB -5 mA
Base saturation voltage VBEsat 0.85 V
@ IC 10 mA
@ IB 1 mA
Base Emitter voltage VBE null V
Collector Base cutoff current ICBO null nA
Emitter Base cutoff current IEBO 50 nA
Gain bandwidth product ft 250 MHz
@ IC -10 mA
@ VCE -20 V
@ f 100 MHz
Marking Marking Type
Thermal resistance junction RTH 200 K/W
Location ambient
Thermal resistance junction (b) RTH null K/W
Location null
Net weight mnet 0.18 g
Case flammability UL94-V0 Yes
UL recognized UL-Recognition null
Collector Base capacitance CCBO 4.5 pF
@ VCB 5 V
Storage temperature Tsmin -55 °C
Tsmax 150 °C

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