2N3906
Bipolar Transistors

Product information

Product family	Bipolar Transistors Control and signal processing
Article description	2N3906 BJT, TO-92, 40V, 200mA, PNP, 0.625W, 150°C
Minimum order quantity	4.000
Stock	140.000
Customs Tariff Number	85412100
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	2N3906

Type	Wire-lead
Package	TO-92
Qualification	Industrial Grade
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	n/a

Collector Emitter voltage	VCEO	-40 V
DC Collector current	IC	-600 mA
Polarity	pol	PNP

Power dissipation	Ptot	0.625 W
	@ TLoc	25 °C
	Location	ambient
DC current gain	hfe	100
	@ VCE	-1 V
	@ IC	-10 mA
DC current gain (b)	hfe	80
	@ VCE	1 V
	@ IC	1 mA
DC current gain (c)	hfe	60
	@ VCE	1 V
	@ IC	0.1 mA
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Peak Collector Current	ICM	null A
Peak Base current	IBM	null mA
Collector Base voltage	VCBO	null V
Emitter Base voltage	VEBO	5 V
Collector saturation voltage	VCEsat	-400 mV
	@ IC	-50 mA
	@ IB	-5 mA
Base saturation voltage	VBEsat	0.85 V
	@ IC	10 mA
	@ IB	1 mA
Base Emitter voltage	VBE	null V
Collector Base cutoff current	ICBO	null nA
Emitter Base cutoff current	IEBO	50 nA
Gain bandwidth product	ft	250 MHz
	@ IC	-10 mA
	@ VCE	-20 V
	@ f	100 MHz
Marking	Marking	Type
Thermal resistance junction	RTH	200 K/W
	Location	ambient
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Net weight	mnet	0.18 g
Case flammability	UL94-V0	Yes
UL recognized	UL-Recognition	null
Collector Base capacitance	CCBO	4.5 pF
	@ VCB	5 V
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C