SiC-basierte Halbleiter Komponenten - SiC MOSFETs und SiC Schottky Dioden

Efficiency and power savings are always a concern when dealing with conventional Si MOSFETs in a high power, fast switching application. There is only one solution: SiC MOSFETs and SiC Schottky Diodes.

SiC based semiconductor components are the new generation invention that surpasses its predecessor in every possible way, such as exceptionally high breakdown voltage, improved switching speed and less susceptibility to self-destruction. The high frequency switching SiC based solution features high reverse voltage with extremely low reverse recovery, better said capacitive charging and thus discharging time.