MMFTP3334K
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	MMFTP3334K Gate Protected MOSFET, SOT-23, P, -30V, -4A, 71mΩ, 150°C
Minimum order quantity	3.000
Stock	9.000
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	MMFTP3334K

Type	SMD
Package	SOT-23
Qualification	Industrial Grade
Config	Single Protected
Life Cycle	active
ESD sensitive	No
MSL	1

ESD protection	ESD protected	Yes
Polarity	pol	P
Drain source voltage	VDS	-30 V

Drain current 25°C	ID	-4 A
On-resistance 1	RDSon1	0.071 Ω
	@ ID	-3 A
	@ VGS	-10 V
Drain current 100°C	ID	null A
On-resistance 2	RDSon2	0.105 Ω
	@ ID	-2 A
	@ VGS	-4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	1 W
	@ TLoc	25 °C
	Location	ambient
Avalanche	No
Peak drain current	IDM	-16 A
	@ tp	null µs
Threshold voltage	VGSth min	-0.8 V
	VGSth max	-2 V
Turn-on delay time	tD(on)	7.6 ns
Rise time	tr	13 ns
Turn-off delay time	tD(off)	10 ns
Fall time	tf	2.8 ns
Total gate charge (10V)	Qg (10V)	5.9 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	1 nC
Single pulse avalanche energy	Eas	null mJ
Input capacitance	Ciss	280 pF
Output capacitance	Coss	55 pF
Reverse transfer capacitance	Crss	40 pF
Reverse recovery charge	Qrr	null nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.01 g
Marking	Marking	NW
Thermal resistance junction	RTH	125 K/W
	Location	ambient
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	10 µA
	@ VGS	16 V
Drain source leakage current	IDSS	1 µA
	@ VDS	30 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	2000 V
Forward transconductance	gfs	null mA/V
Intrinsic gate resistance	RGi	null Ω