MMFTP330K
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	MMFTP330K Gate protected MOSFET, SOT-23, P, -20V, -3A, 38mΩ, 150°C
Minimum order quantity	3.000
Stock	0
Customs Tariff Number	85412100
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	MMFTP330K

Type	SMD
Package	SOT-23
Qualification	Industrial Grade
Config	Single Protected
Life Cycle	active
ESD sensitive	No
MSL	3

ESD protection	ESD protected	Yes
Polarity	pol	P
Drain source voltage	VDS	-20 V

Drain current 25°C	ID	-3 A
On-resistance 1	RDSon1	0.038 Ω
	@ ID	-3 A
	@ VGS	-4.5 V
Drain current 100°C	ID	null A
On-resistance 2	RDSon2	0.05 Ω
	@ ID	-2.5 A
	@ VGS	-2.7 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	0.48 W
	@ TLoc	25 °C
	Location	ambient
Avalanche	No
Peak drain current	IDM	-9.1 A
	@ tp	null µs
Threshold voltage	VGSth min	-0.4 V
	VGSth max	-1 V
Turn-on delay time	tD(on)	100 ns
Rise time	tr	200 ns
Turn-off delay time	tD(off)	1000 ns
Fall time	tf	550 ns
Total gate charge (10V)	Qg (10V)	null nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	5 nC
Single pulse avalanche energy	Eas	null mJ
Input capacitance	Ciss	1600 pF
Output capacitance	Coss	150 pF
Reverse transfer capacitance	Crss	130 pF
Reverse recovery charge	Qrr	null nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.01 g
Marking	Marking	330K
Thermal resistance junction	RTH	260 K/W
	Location	ambient
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	10 µA
	@ VGS	8 V
Drain source leakage current	IDSS	1 µA
	@ VDS	16 V
Gate source voltage DC	VGSS	8 V
Gate source voltage ESD	VGSS	2000 V
Forward transconductance	gfs	30 mA/V
Intrinsic gate resistance	RGi	null Ω