MMFTP2319A-AQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	MMFTP2319A-AQ MOSFET, SOT-23, P, -40V, -4.2A, 97mΩ, 150°C, AEC-Q101
Minimum order quantity	3.000
Stock	0
Customs Tariff Number	85412100
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	MMFTP2319A-AQ

Type	SMD
Package	SOT-23
Qualification	AEC-Q101
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	1

ESD protection	ESD protected	No
Polarity	pol	P
Drain source voltage	VDS	-40 V

Drain current 25°C	ID	-4.2 A
On-resistance 1	RDSon1	0.097 Ω
	@ ID	-3 A
	@ VGS	-10 V
Drain current 100°C	ID	null A
On-resistance 2	RDSon2	0.156 Ω
	@ ID	-3 A
	@ VGS	-4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	0.75 W
	@ TLoc	25 °C
	Location	ambient
Avalanche	No
Peak drain current	IDM	-30 A
	@ tp	null µs
Threshold voltage	VGSth min	-1 V
	VGSth max	-2.5 V
Turn-on delay time	tD(on)	7 ns
Rise time	tr	1 ns
Turn-off delay time	tD(off)	8 ns
Fall time	tf	2 ns
Total gate charge (10V)	Qg (10V)	null nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	1 nC
Single pulse avalanche energy	Eas	null mJ
Input capacitance	Ciss	432 pF
Output capacitance	Coss	38 pF
Reverse transfer capacitance	Crss	17 pF
Reverse recovery charge	Qrr	5 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.01 g
Marking	Marking	WH1
Thermal resistance junction	RTH	100 K/W
	Location	ambient
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	16 V
Drain source leakage current	IDSS	1 µA
	@ VDS	32 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	7.3 mA/V
Intrinsic gate resistance	RGi	7 Ω