MMFTN2362
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	MMFTN2362 MOSFET, SOT-23, N, 60V, 3A, 80mΩ, 150°C
Minimum order quantity	3.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	MMFTN2362

Type	SMD
Package	SOT-23
Qualification	Industrial Grade
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	1

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	60 V

Drain current 25°C	ID	3 A
On-resistance 1	RDSon1	0.08 Ω
	@ ID	3 A
	@ VGS	10 V
Drain current 100°C	ID	null A
On-resistance 2	RDSon2	0.1 Ω
	@ ID	2.4 A
	@ VGS	4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	1.25 W
	@ TLoc	25 °C
	Location	ambient
Avalanche	No
Peak drain current	IDM	12 A
	@ tp	100 µs
Threshold voltage	VGSth min	1 V
	VGSth max	2.5 V
Turn-on delay time	tD(on)	7 ns
Rise time	tr	2 ns
Turn-off delay time	tD(off)	6 ns
Fall time	tf	5 ns
Total gate charge (10V)	Qg (10V)	8.6 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	1 nC
Single pulse avalanche energy	Eas	null mJ
Input capacitance	Ciss	445 pF
Output capacitance	Coss	22 pF
Reverse transfer capacitance	Crss	18 pF
Reverse recovery charge	Qrr	4 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.01 g
Marking	Marking	M4
Thermal resistance junction	RTH	100 K/W
	Location	ambient
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	48 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	4.2 mA/V
Intrinsic gate resistance	RGi	1.3 Ω

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