MMFTN2316K
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	MMFTN2316K MOSFET, SOT-23, N, 30V, 6.2A, 23.5mΩ, 150°C
Minimum order quantity	3.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	MMFTN2316K

Type	SMD
Package	SOT-23
Qualification	Industrial Grade
Config	Single Protected
Life Cycle	active
ESD sensitive	No
MSL	3

ESD protection	ESD protected	Yes
Polarity	pol	N
Drain source voltage	VDS	30 V

Drain current 25°C	ID	6.2 A
On-resistance 1	RDSon1	0.0235 Ω
	@ ID	6.2 A
	@ VGS	10 V
Drain current 100°C	ID	null A
On-resistance 2	RDSon2	0.026 Ω
	@ ID	5 A
	@ VGS	4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	1.5 W
	@ TLoc	25 °C
	Location	ambient
Avalanche	No
Peak drain current	IDM	25 A
	@ tp	null µs
Threshold voltage	VGSth min	0.6 V
	VGSth max	1.3 V
Turn-on delay time	tD(on)	6 ns
Rise time	tr	11 ns
Turn-off delay time	tD(off)	23 ns
Fall time	tf	4 ns
Total gate charge (10V)	Qg (10V)	null nC
Total gate charge (4.5V)	Qg (4.5V)	6.5 nC
Gate-drain charge	Qgd	2 nC
Single pulse avalanche energy	Eas	null mJ
Input capacitance	Ciss	600 pF
Output capacitance	Coss	70 pF
Reverse transfer capacitance	Crss	45 pF
Reverse recovery charge	Qrr	6 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.01 g
Marking	Marking	2316
Thermal resistance junction	RTH	125 K/W
	Location	ambient
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	10 µA
	@ VGS	12 V
Drain source leakage current	IDSS	1 µA
	@ VDS	24 V
Gate source voltage DC	VGSS	12 V
Gate source voltage ESD	VGSS	2000 V
Forward transconductance	gfs	15 mA/V
Intrinsic gate resistance	RGi	1.8 Ω