MMFT8472DW
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	MMFT8472DW MOSFET, SOT-363, N+P, 50V, 0.115A, 10Ω, 150°C
Minimum order quantity	3.000
Stock	6.000
Customs Tariff Number	85412100
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	MMFT8472DW

Type	SMD
Package	SOT-363
Qualification	Industrial Grade
Config	Dual
Life Cycle	active
ESD sensitive	No
MSL	1

ESD protection	ESD protected	No
Polarity	pol	N+P
Drain source voltage	VDS	50 V

Drain current 25°C	ID	0.115 A
On-resistance 1	RDSon1	10 Ω
	@ ID	0.13 A
	@ VGS	10 V
Drain current 100°C	ID	null A
On-resistance 2	RDSon2	null Ω
	@ ID	null A
	@ VGS	null V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	0.2 W
	@ TLoc	25 °C
	Location	ambient
Avalanche	No
Peak drain current	IDM	0.52 A
	@ tp	50 µs
Threshold voltage	VGSth min	1 V
	VGSth max	2.5 V
Turn-on delay time	tD(on)	20 ns
Rise time	tr	3 ns
Turn-off delay time	tD(off)	20 ns
Fall time	tf	7 ns
Total gate charge (10V)	Qg (10V)	null nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	null nC
Single pulse avalanche energy	Eas	null mJ
Input capacitance	Ciss	50 pF
Output capacitance	Coss	25 pF
Reverse transfer capacitance	Crss	5 pF
Reverse recovery charge	Qrr	null nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.01 g
Marking	Marking	MY
Thermal resistance junction	RTH	null K/W
	Location	null
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	60 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	80 mA/V
Intrinsic gate resistance	RGi	null Ω