MMDT521FW-AQ
Digital Transistors
Product information
| Product family | Digital Transistors Digital controls, signal processing |
|---|---|
| Article description |
MMDT521FW-AQ
Biased BJT, SOT-323, NPN, 4.7kΩ, 10kΩ, 50V, 150°C, AEC-Q101 |
| Minimum order quantity | 3.000 |
| Stock | 0 |
| Customs Tariff Number | 85412100 |
| RoHS | compliant |
| REACH | not declarable |
| Lead free | Yes |
| Halogen free | Yes |
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Technical data
| Article number | MMDT521FW-AQ | |
|---|---|---|
|
||
| Type | SMD | |
| Package | SOT-323 | |
| Qualification | AEC-Q101 | |
| Config | Single 2R | |
| Life Cycle | engineering sample | |
| ESD sensitive | Yes | |
| MSL | 1 | |
| Polarity | pol | NPN |
| Resistor | R1 | 4700 Ω |
| R2 | 10000 Ω | |
| Collector Emitter voltage | VCEO | 50 V |
| Collector Base voltage | VCBO | |
| Emitter Base voltage | VEBO | |
| Junction temperature | Tjmin | -55 °C |
| Tjmax | 150 °C | |
| DC Collector current | IC | 100 mA |
| Peak Collector Current | ICM | |
| Power dissipation | Ptot | 0.2 W |
| @ TLoc | 25 °C | |
| Location | Junction | |
| Thermal resistance junction | RTH | |
| Location | ||
| Thermal resistance junction (b) | RTH | |
| Location | ||
| DC current gain | hfe | |
| @ VCE | ||
| @ IC | ||
| DC current gain (b) | hfe | |
| @ VCE | ||
| @ IC | ||
| DC current gain (c) | hfe | |
| @ VCE | ||
| @ IC | ||
| Collector Base capacitance | CCBO | |
| @ VCB | ||
| Collector saturation voltage | VCEsat | |
| @ IC | ||
| @ IB | ||
| Input voltage on | VIon | 2.5 V |
| @ VCE | 0.3 V | |
| @ IC | 20 mA | |
| Input voltage off | VIoff | 0.3 V |
| @ VCE | 5 V | |
| @ IC | 0.1 mA | |
| Base Emitter voltage | VBE | |
| Collector Base cutoff current | ICBO | 100 nA |
| Emitter Base cutoff current | IEBO | 2000000 nA |
| Gain bandwidth product | ft | 250 MHz |
| @ IC | 5 mA | |
| @ VCE | 10 V | |
| @ f | 100 MHz | |
| Marking | Marking | Y8 |
| Net weight | mnet | 0.01 g |
| Case flammability | UL94-V0 | Yes |
| UL recognized | UL-Recognition | |
| Storage temperature | Tsmin | |
| Tsmax | ||
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