MMBT7002KDW-AQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	MMBT7002KDW-AQ Gate protected MOSFET, SOT-363, N+N, 60V, 0.3A, 3Ω, 150°C, AEC-Q101
Minimum order quantity	3.000
Stock	0
Customs Tariff Number	85412100
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	MMBT7002KDW-AQ

Type	SMD
Package	SOT-363
Qualification	AEC-Q101
Config	Dual Protected
Life Cycle	active
ESD sensitive	No
MSL	1

ESD protection	ESD protected	Yes
Polarity	pol	N+N
Drain source voltage	VDS	60 V

Drain current 25°C	ID	0.3 A
On-resistance 1	RDSon1	3 Ω
	@ ID	0.5 A
	@ VGS	10 V
Drain current 100°C	ID	null A
On-resistance 2	RDSon2	4 Ω
	@ ID	0.05 A
	@ VGS	4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	0.35 W
	@ TLoc	25 °C
	Location	ambient
Avalanche	No
Peak drain current	IDM	1.2 A
	@ tp	10 µs
Threshold voltage	VGSth min	1.1 V
	VGSth max	1.8 V
Turn-on delay time	tD(on)	3 ns
Rise time	tr	3 ns
Turn-off delay time	tD(off)	13 ns
Fall time	tf	8 ns
Total gate charge (10V)	Qg (10V)	null nC
Total gate charge (4.5V)	Qg (4.5V)	0.4 nC
Gate-drain charge	Qgd	0 nC
Single pulse avalanche energy	Eas	null mJ
Input capacitance	Ciss	21 pF
Output capacitance	Coss	12 pF
Reverse transfer capacitance	Crss	0.35 pF
Reverse recovery charge	Qrr	29 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.01 g
Marking	Marking	K7
Thermal resistance junction	RTH	432 K/W
	Location	ambient
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	10 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	60 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	2000 V
Forward transconductance	gfs	80 mA/V
Intrinsic gate resistance	RGi	200 Ω