MMBT619WP
Bipolar Transistors

Product information

Product family	Bipolar Transistors Control and signal processing
Article description	MMBT619WP BJT, SOT-23, 100V, 4 A, NPN, 1.5W, 150°C
Minimum order quantity	4.000
Stock	0
Customs Tariff Number	85412100
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	MMBT619WP

Type	SMD
Package	DFN 2x2
Qualification	Industrial Grade
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	1

Collector Emitter voltage	VCEO	100 V
DC Collector current	IC	4000 mA
Polarity	pol	NPN

Power dissipation	Ptot	1.500 W
	@ TLoc	25 °C
	Location	Junction
DC current gain	hfe	300
	@ VCE	2 V
	@ IC	200 mA
DC current gain (b)	hfe	200
	@ VCE	2 V
	@ IC	10 mA
DC current gain (c)	hfe	100
	@ VCE	2 V
	@ IC	2000 mA
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Peak Collector Current	ICM	6000 A
Peak Base current	IBM
Collector Base voltage	VCBO	50 V
Emitter Base voltage	VEBO	7 V
Collector saturation voltage	VCEsat	130.0 mV
	@ IC	1000 mA
	@ IB	50.0 mA
Base saturation voltage	VBEsat	1.1 V
	@ IC	4000 mA
	@ IB	200.0 mA
Base Emitter voltage	VBE
Collector Base cutoff current	ICBO	100.0 nA
Emitter Base cutoff current	IEBO	100 nA
Gain bandwidth product	ft	100.0 MHz
	@ IC	50 mA
	@ VCE	10 V
	@ f	100 MHz
Marking	Marking	4H
Thermal resistance junction	RTH	83.0 K/W
	Location	ambient
Thermal resistance junction (b)	RTH
	Location
Net weight	mnet	0.01 g
Case flammability	UL94-V0	Yes
UL recognized	UL-Recognition
Collector Base capacitance	CCBO	20 pF
	@ VCB	10 V
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C