MDE0A5C060K
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	MDE0A5C060K MOSFET, SOT-563 Dual, N+P, 60V, 0.5A, 1.8Ω, 150°C
Minimum order quantity	4.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	No
Halogen free	No

Article number	MDE0A5C060K

Type	SMD
Package	SOT-563
Qualification	Industrial Grade
Config	Dual protected
Life Cycle	engineering sample
ESD sensitive	No
MSL	1

ESD protection	ESD protected	Yes
Polarity	pol	N+P
Drain source voltage	VDS	60 V

Drain current 25°C	ID	0.5 A
On-resistance 1	RDSon1	1.8 Ω
	@ ID	0.300 A
	@ VGS	10 V
Drain current 100°C	ID	null A
On-resistance 2	RDSon2	4.6 Ω
	@ ID	-0.1 A
	@ VGS	-10 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	0.45 W
	@ TLoc	25 °C
	Location	ambient
Avalanche	No
Peak drain current	IDM	1 A
	@ tp	100 µs
Threshold voltage	VGSth min	1 V
	VGSth max	2.5 V
Turn-on delay time	tD(on)	3.5 ns
Rise time	tr	3.2 ns
Turn-off delay time	tD(off)	12 ns
Fall time	tf	10 ns
Total gate charge (10V)	Qg (10V)	TBA nC
Total gate charge (4.5V)	Qg (4.5V)	TBA nC
Gate-drain charge	Qgd	TBA nC
Single pulse avalanche energy	Eas	TBA mJ
Input capacitance	Ciss	23.7 pF
Output capacitance	Coss	5.3 pF
Reverse transfer capacitance	Crss	2.5 pF
Reverse recovery charge	Qrr	null nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.01 g
Marking	Marking	QB
Thermal resistance junction	RTH	278 K/W
	Location	ambient
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	278.0 K/W
	Location	Ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	10 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	60 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	2000 V
Forward transconductance	gfs	null mA/V
Intrinsic gate resistance	RGi	TBA Ω