DIW300N10
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DIW300N10 MOSFET, TO-247-3L, N, 100V, 300A, 0.0016Ω, 175°C
Minimum order quantity	450
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption 7(a)-I
REACH	declarable
Lead free	No
Halogen free	No

Article number	DIW300N10

Type	Wire-lead
Package	TO-247-3L
Qualification	Industrial Grade
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	n/a

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	100 V

Drain current 25°C	ID	300 A
On-resistance 1	RDSon1	0.0016 Ω
	@ ID	30 A
	@ VGS	10 V
Drain current 100°C	ID	212 A
On-resistance 2	RDSon2	null Ω
	@ ID	null A
	@ VGS	null V
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	250 W
	@ TLoc	25 °C
	Location	Junction
Avalanche	Yes
Peak drain current	IDM	1200 A
	@ tp	10000 µs
Threshold voltage	VGSth min	2.4 V
	VGSth max	4.5 V
Turn-on delay time	tD(on)	56 ns
Rise time	tr	80 ns
Turn-off delay time	tD(off)	34 ns
Fall time	tf	17 ns
Total gate charge (10V)	Qg (10V)	150 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	38 nC
Single pulse avalanche energy	Eas	1509 mJ
Input capacitance	Ciss	9734 pF
Output capacitance	Coss	3165 pF
Reverse transfer capacitance	Crss	37 pF
Reverse recovery charge	Qrr	335 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	6 g
Marking	Marking	Type
Thermal resistance junction	RTH	0.6 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	35 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	175 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	100 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	141 mA/V
Intrinsic gate resistance	RGi	0.6 Ω