DIW012N65
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DIW012N65 MOSFET, TO-247-3L, N, 650V, 12A, 0.19Ω, 150°C
Minimum order quantity	450
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption 7(a)-I
REACH	declarable
Lead free	No
Halogen free	No

Article number	DIW012N65

Type	Wire-lead
Package	TO-247-3L
Qualification	Industrial Grade
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	n/a

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	650 V

Drain current 25°C	ID	12 A
On-resistance 1	RDSon1	0.19 Ω
	@ ID	10 A
	@ VGS	4.5 V
Drain current 100°C	ID	7.5 A
On-resistance 2	RDSon2	null Ω
	@ ID	null A
	@ VGS	null V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	125 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	Yes
Peak drain current	IDM	60 A
	@ tp	10000 µs
Threshold voltage	VGSth min	2 V
	VGSth max	4 V
Turn-on delay time	tD(on)	60 ns
Rise time	tr	22 ns
Turn-off delay time	tD(off)	60 ns
Fall time	tf	28 ns
Total gate charge (10V)	Qg (10V)	45 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	21 nC
Single pulse avalanche energy	Eas	988 mJ
Input capacitance	Ciss	1479 pF
Output capacitance	Coss	91 pF
Reverse transfer capacitance	Crss	10 pF
Reverse recovery charge	Qrr	5 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	6 g
Marking	Marking	Type
Thermal resistance junction	RTH	1 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	40 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	30 V
Drain source leakage current	IDSS	1 µA
	@ VDS	650 V
Gate source voltage DC	VGSS	30 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	null mA/V
Intrinsic gate resistance	RGi	1 Ω