DIT090P06
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DIT090P06 MOSFET, TO-220AB, P, -60V, -90A, 9.8mΩ, 175°C
Minimum order quantity	1.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption
REACH	declarable
Lead free	No
Halogen free	No

Article number	DIT090P06

Type	Wire-lead
Package	TO-220AB
Qualification	Industrial Grade
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	n/a

ESD protection	ESD protected	No
Polarity	pol	P
Drain source voltage	VDS	-60 V

Drain current 25°C	ID	-90 A
On-resistance 1	RDSon1	0.0098 Ω
	@ ID	-20 A
	@ VGS	-10 V
Drain current 100°C	ID	0 A
On-resistance 2	RDSon2	0.0124 Ω
	@ ID	-15 A
	@ VGS	-4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	220 W
	@ TLoc	25 °C
	Location	Junction
Avalanche	Yes
Peak drain current	IDM	-200 A
	@ tp	10000000 µs
Threshold voltage	VGSth min	-1 V
	VGSth max	-2.5 V
Turn-on delay time	tD(on)	80 ns
Rise time	tr	198 ns
Turn-off delay time	tD(off)	412 ns
Fall time	tf	203 ns
Total gate charge (10V)	Qg (10V)	184 nC
Total gate charge (4.5V)	Qg (4.5V)	0 nC
Gate-drain charge	Qgd	45 nC
Single pulse avalanche energy	Eas	289 mJ
Input capacitance	Ciss	11802 pF
Output capacitance	Coss	499 pF
Reverse transfer capacitance	Crss	414 pF
Reverse recovery charge	Qrr	0 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	2.2 g
Marking	Marking	Type
Thermal resistance junction	RTH	0.68 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	55 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	175 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	60 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	TBA mA/V
Intrinsic gate resistance	RGi	3 Ω