DIT050N06
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DIT050N06 MOSFET, TO-220AB, N, 60V, 50A, 14mΩ, 175°C
Minimum order quantity	1.000
Stock	4.380
Customs Tariff Number	85412900
RoHS	compliant with exemption 7(a)-I
REACH	declarable
Lead free	No
Halogen free	No

Article number	DIT050N06

Type	Wire-lead
Package	TO-220AB
Qualification	Industrial Grade
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	n/a

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	60 V

Drain current 25°C	ID	50 A
On-resistance 1	RDSon1	0.014 Ω
	@ ID	20 A
	@ VGS	10 V
Drain current 100°C	ID	35 A
On-resistance 2	RDSon2	null Ω
	@ ID	null A
	@ VGS	null V
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	85 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	Yes
Peak drain current	IDM	90 A
	@ tp	300 µs
Threshold voltage	VGSth min	1.4 V
	VGSth max	2.5 V
Turn-on delay time	tD(on)	7 ns
Rise time	tr	5 ns
Turn-off delay time	tD(off)	28 ns
Fall time	tf	6 ns
Total gate charge (10V)	Qg (10V)	50 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	15 nC
Single pulse avalanche energy	Eas	245 mJ
Input capacitance	Ciss	2050 pF
Output capacitance	Coss	158 pF
Reverse transfer capacitance	Crss	120 pF
Reverse recovery charge	Qrr	40 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	2.2 g
Marking	Marking	Type
Thermal resistance junction	RTH	1.7 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	175 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	60 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	18 mA/V
Intrinsic gate resistance	RGi	tbd Ω

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