DI7A5N65D2K
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI7A5N65D2K Gate Protected MOSFET, D2PAK, N, 650V, 7.5A, 0.43Ω, 150°C
Minimum order quantity	800
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption 7(a)-I
REACH	declarable
Lead free	No
Halogen free	No

Article number	DI7A5N65D2K

Type	SMD
Package	TO-263AB/D2PAK
Qualification	Industrial Grade
Config	Single Protected
Life Cycle	active
ESD sensitive	No
MSL	3

ESD protection	ESD protected	Yes
Polarity	pol	N
Drain source voltage	VDS	650 V

Drain current 25°C	ID	7.5 A
On-resistance 1	RDSon1	0.43 Ω
	@ ID	4 A
	@ VGS	10 V
Drain current 100°C	ID	4.7 A
On-resistance 2	RDSon2	null Ω
	@ ID	null A
	@ VGS	null V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	62.5 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	Yes
Peak drain current	IDM	25 A
	@ tp	10000 µs
Threshold voltage	VGSth min	2 V
	VGSth max	4 V
Turn-on delay time	tD(on)	43 ns
Rise time	tr	13 ns
Turn-off delay time	tD(off)	43 ns
Fall time	tf	50 ns
Total gate charge (10V)	Qg (10V)	18.4 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	7 nC
Single pulse avalanche energy	Eas	174 mJ
Input capacitance	Ciss	722 pF
Output capacitance	Coss	24 pF
Reverse transfer capacitance	Crss	6 pF
Reverse recovery charge	Qrr	2 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.32 g
Marking	Marking	Type
Thermal resistance junction	RTH	2 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	40 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	1 µA
	@ VGS	24 V
Drain source leakage current	IDSS	1 µA
	@ VDS	520 V
Gate source voltage DC	VGSS	30 V
Gate source voltage ESD	VGSS	2000 V
Forward transconductance	gfs	8.6 mA/V
Intrinsic gate resistance	RGi	12.3 Ω