DI2A8N03PWK2-AQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI2A8N03PWK2-AQ MOSFET, PowerQFN 2x2, N+N, 30V, 2.8A, 72mΩ, 150°C, AEC-Q101
Minimum order quantity	4.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	DI2A8N03PWK2-AQ

Type	SMD
Package	PowerQFN 2x2-Dual
Qualification	AEC-Q101
Config	Dual Protected
Life Cycle	active
ESD sensitive	No
MSL	1

ESD protection	ESD protected	Yes
Polarity	pol	N+N
Drain source voltage	VDS	30 V

Drain current 25°C	ID	2.8 A
On-resistance 1	RDSon1	0.072 Ω
	@ ID	2 A
	@ VGS	5 V
Drain current 100°C	ID	null A
On-resistance 2	RDSon2	0.102 Ω
	@ ID	1 A
	@ VGS	2.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	1 W
	@ TLoc	25 °C
	Location	ambient
Avalanche	No
Peak drain current	IDM	12 A
	@ tp	10000 µs
Threshold voltage	VGSth min	0.4 V
	VGSth max	1.2 V
Turn-on delay time	tD(on)	1138 ns
Rise time	tr	68 ns
Turn-off delay time	tD(off)	892 ns
Fall time	tf	99 ns
Total gate charge (10V)	Qg (10V)	null nC
Total gate charge (4.5V)	Qg (4.5V)	6.8 nC
Gate-drain charge	Qgd	6 nC
Single pulse avalanche energy	Eas	null mJ
Input capacitance	Ciss	387 pF
Output capacitance	Coss	37 pF
Reverse transfer capacitance	Crss	10 pF
Reverse recovery charge	Qrr	3 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.05 g
Marking	Marking	Type
Thermal resistance junction	RTH	125 K/W
	Location	ambient
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	10 µA
	@ VGS	10 V
Drain source leakage current	IDSS	1 µA
	@ VDS	24 V
Gate source voltage DC	VGSS	12 V
Gate source voltage ESD	VGSS	1000 V
Forward transconductance	gfs	tbd mA/V
Intrinsic gate resistance	RGi	1.8 Ω