DI2A7N70D1K-Q
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI2A7N70D1K-Q Gate Protected MOSFET, DPAK, N, 700V, 2.7A, 1.6Ω, 150°C
Minimum order quantity	2.500
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption 7(a)-I
REACH	declarable
Lead free	No
Halogen free	No

Article number	DI2A7N70D1K-Q

Type	SMD
Package	TO-252AA/D-PAK
Qualification	AEC-Q compliant
Config	Single Protected
Life Cycle	active
ESD sensitive	No
MSL	3

ESD protection	ESD protected	Yes
Polarity	pol	N
Drain source voltage	VDS	700 V

Drain current 25°C	ID	2.7 A
On-resistance 1	RDSon1	1.6 Ω
	@ ID	1 A
	@ VGS	10 V
Drain current 100°C	ID	1.7 A
On-resistance 2	RDSon2	null Ω
	@ ID	null A
	@ VGS	null V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	34.4 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	Yes
Peak drain current	IDM	6 A
	@ tp	10000 µs
Threshold voltage	VGSth min	2.5 V
	VGSth max	3.5 V
Turn-on delay time	tD(on)	9 ns
Rise time	tr	11 ns
Turn-off delay time	tD(off)	19 ns
Fall time	tf	86 ns
Total gate charge (10V)	Qg (10V)	5.8 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	2 nC
Single pulse avalanche energy	Eas	19.3 mJ
Input capacitance	Ciss	209 pF
Output capacitance	Coss	12 pF
Reverse transfer capacitance	Crss	5 pF
Reverse recovery charge	Qrr	498 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.32 g
Marking	Marking	Type
Thermal resistance junction	RTH	3.6 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	36 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	1 µA
	@ VGS	16 V
Drain source leakage current	IDSS	1 µA
	@ VDS	5650 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	2000 V
Forward transconductance	gfs	82 mA/V
Intrinsic gate resistance	RGi	20 Ω