DI2A2N80D1
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI2A2N80D1 MOSFET, DPAK, N, 800V, 2.2A, 4.8Ω, 150°C
Minimum order quantity	2.500
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption 7(a)-I
REACH	declarable
Lead free	No
Halogen free	No

Article number	DI2A2N80D1

Type	SMD
Package	TO-252AA/D-PAK
Qualification	Industrial Grade
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	1

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	800 V

Drain current 25°C	ID	2.2 A
On-resistance 1	RDSon1	4.8 Ω
	@ ID	1.5 A
	@ VGS	10 V
Drain current 100°C	ID	1.5 A
On-resistance 2	RDSon2	null Ω
	@ ID	null A
	@ VGS	null V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	54 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	Yes
Peak drain current	IDM	4.5 A
	@ tp	10000 µs
Threshold voltage	VGSth min	2 V
	VGSth max	4 V
Turn-on delay time	tD(on)	21 ns
Rise time	tr	16 ns
Turn-off delay time	tD(off)	16 ns
Fall time	tf	101 ns
Total gate charge (10V)	Qg (10V)	9.6 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	3 nC
Single pulse avalanche energy	Eas	19 mJ
Input capacitance	Ciss	398 pF
Output capacitance	Coss	14 pF
Reverse transfer capacitance	Crss	6 pF
Reverse recovery charge	Qrr	323 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.32 g
Marking	Marking	Type
Thermal resistance junction	RTH	2.3 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	45 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	24 V
Drain source leakage current	IDSS	1 µA
	@ VDS	640 V
Gate source voltage DC	VGSS	30 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	2 mA/V
Intrinsic gate resistance	RGi	5 Ω