DI212N14TL-AQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI212N14TL-AQ MOSFET, TOLL, N, 140V, 212A, AEC-Q101
Minimum order quantity	2.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption
REACH	declarable
Lead free	No
Halogen free	No

Article number	DI212N14TL-AQ

Type	SMD
Package	HSOF-8/TOLL
Qualification	AEC-Q101
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	1

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	140 V

Drain current 25°C	ID	212 A
On-resistance 1	RDSon1	0.0035 Ω
	@ ID	50 A
	@ VGS	10 V
Drain current 100°C	ID	149 A
On-resistance 2	RDSon2	null Ω
	@ ID	null A
	@ VGS	null V
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	277 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	No
Peak drain current	IDM	848 A
	@ tp	null µs
Threshold voltage	VGSth min	2 V
	VGSth max	4 V
Turn-on delay time	tD(on)	TBA ns
Rise time	tr	TBA ns
Turn-off delay time	tD(off)	TBA ns
Fall time	tf	TBA ns
Total gate charge (10V)	Qg (10V)	TBA nC
Total gate charge (4.5V)	Qg (4.5V)	TBA nC
Gate-drain charge	Qgd	57 nC
Single pulse avalanche energy	Eas	TBA mJ
Input capacitance	Ciss	TBA pF
Output capacitance	Coss	TBA pF
Reverse transfer capacitance	Crss	TBA pF
Reverse recovery charge	Qrr	TBA nC
Case flammability	UL94-V0	Yes
Net weight	mnet	2 g
Marking	Marking	Type
Thermal resistance junction	RTH	0.54 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	35 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	175 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	120 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	TBA mA/V
Intrinsic gate resistance	RGi	TBA Ω