DI200N10D2-Q
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI200N10D2-Q MOSFET, D2PAK, N, 100V, 200A, 2.3mΩ, 175°C
Minimum order quantity	800
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption
REACH	declarable
Lead free	No
Halogen free	No

Article number	DI200N10D2-Q

Type	SMD
Package	TO-263AB/D2PAK
Qualification	AEC-Q compliant
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	100 V

Drain current 25°C	ID	200 A
On-resistance 1	RDSon1	0.0023 Ω
	@ ID	120 A
	@ VGS	10 V
Drain current 100°C	ID	185 A
On-resistance 2	RDSon2	null Ω
	@ ID	null A
	@ VGS	null V
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	340 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	No
Peak drain current	IDM	950 A
	@ tp	10000 µs
Threshold voltage	VGSth min	2 V
	VGSth max	4 V
Turn-on delay time	tD(on)	38 ns
Rise time	tr	28 ns
Turn-off delay time	tD(off)	80 ns
Fall time	tf	35 ns
Total gate charge (10V)	Qg (10V)	262 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	62 nC
Single pulse avalanche energy	Eas	451 mJ
Input capacitance	Ciss	16800 pF
Output capacitance	Coss	1350 pF
Reverse transfer capacitance	Crss	80 pF
Reverse recovery charge	Qrr	290 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	1.6 g
Marking	Marking	Type
Thermal resistance junction	RTH	0.44 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	175 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	100 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	290 mA/V
Intrinsic gate resistance	RGi	2.8 Ω