DI120SIC052QD-AQ
SiC MOSFETs

Product information

Product family	SiC MOSFETs High Speed High Voltage (Power) Switch
Article description	DI120SIC052QD-AQ 1200V SiC MOSFET SiC MOSFET, QDPAK, N, 49A, 1200V, 52mΩ, 175°C, AEC-Q101
Minimum order quantity	1.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption
REACH	declarable
Lead free	No
Halogen free	No

Article number	DI120SIC052QD-AQ

Type	Wire-lead
Package	QDPAK
Qualification	AEC-Q101
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

Drain source voltage	VDS	1200 V
Drain current 25°C	ID	49.000 A
On-resistance 1	RDSon1	0.05200 Ω

	@ ID	20.000 A
	@ VGS	18 V
On-resistance 2	RDSon2	0.05000 Ω
	@ ID	20.000 A
	@ VGS	15 V
Polarity	pol	N
ESD protection	ESD protected	No
Gate source voltage DC	VGSS
Gate source voltage ESD	VGSS
Drain current 100°C	ID	35.000 A
Peak drain current	IDM	120.000 A
	@ tp	10 µs
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	300.000 W
	@ TLoc	25 °C
	Location	Junction
Threshold voltage	VGSth min	2.0 V
	VGSth max	2.9 V
Turn-on delay time	tD(on)	19 ns
Rise time	tr	12 ns
Turn-off delay time	tD(off)	33 ns
Fall time	tf	10 ns
Total switching energy	Etotal	176.00 mJ
Total gate charge (4.5V)	Qg (4.5V)
Total gate charge (10V)	Qg (10V)	65.0 nC
Gate-drain charge	Qgd	17 nC
Single pulse avalanche energy	Eas
Input capacitance	Ciss	1752 pF
Output capacitance	Coss	74 pF
Reverse transfer capacitance	Crss	7 pF
Reverse recovery charge	Qrr	241.0 nC
Avalanche	No
Net weight	mnet
Marking	Marking
Case flammability	UL94-V0	No
Thermal resistance junction	RTH
	Location
UL recognized	UL-Recognition
Thermal resistance junction (b)	RTH
	Location
Storage temperature	Tsmin
	Tsmax
Solder & Assembly	Solder & Assembly