DI100P04PQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI100P04PQ MOSFET, PowerQFN 5x6, P, -40V, -100A, 3.8mΩ, 175°C,
Minimum order quantity	5.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption 7(a)-I
REACH	declarable
Lead free	No
Halogen free	No

Article number	DI100P04PQ

Type	SMD
Package	PowerQFN 5x6
Qualification	Industrial Grade
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	P
Drain source voltage	VDS	-40 V

Drain current 25°C	ID	-100 A
On-resistance 1	RDSon1	0.005 Ω
	@ ID	-20 A
	@ VGS	-10 V
Drain current 100°C	ID	-100 A
On-resistance 2	RDSon2	0.0075 Ω
	@ ID	-10 A
	@ VGS	-4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	50 W
	@ TLoc	25 °C
	Location	Terminal
Avalanche	Yes
Peak drain current	IDM	-400 A
	@ tp	10000 µs
Threshold voltage	VGSth min	-1 V
	VGSth max	-2.2 V
Turn-on delay time	tD(on)	13 ns
Rise time	tr	78 ns
Turn-off delay time	tD(off)	194 ns
Fall time	tf	110 ns
Total gate charge (10V)	Qg (10V)	118 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	27 nC
Single pulse avalanche energy	Eas	272 mJ
Input capacitance	Ciss	5705 pF
Output capacitance	Coss	654 pF
Reverse transfer capacitance	Crss	555 pF
Reverse recovery charge	Qrr	15 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.1 g
Marking	Marking	Type
Thermal resistance junction	RTH	1.8 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	45 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	175 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	40 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	41 mA/V
Intrinsic gate resistance	RGi	null Ω