DI100N10PQ-AQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI100N10PQ-AQ MOSFET, PowerQFN 5x6, N, 100V, 80A, 4.5mΩ, 175°C, AEC-Q101
Minimum order quantity	5.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption 7(a)-I
REACH	declarable
Lead free	No
Halogen free	No

Article number	DI100N10PQ-AQ

Type	SMD
Package	PowerQFN 5x6
Qualification	AEC-Q101
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	100 V

Drain current 25°C	ID	80 A
On-resistance 1	RDSon1	0.0045 Ω
	@ ID	50 A
	@ VGS	10 V
Drain current 100°C	ID	50 A
On-resistance 2	RDSon2	0.0066 Ω
	@ ID	20 A
	@ VGS	4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	60 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	Yes
Peak drain current	IDM	480 A
	@ tp	1000 µs
Threshold voltage	VGSth min	1.2 V
	VGSth max	2.4 V
Turn-on delay time	tD(on)	26 ns
Rise time	tr	43 ns
Turn-off delay time	tD(off)	23 ns
Fall time	tf	8 ns
Total gate charge (10V)	Qg (10V)	75 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	12 nC
Single pulse avalanche energy	Eas	144 mJ
Input capacitance	Ciss	3742 pF
Output capacitance	Coss	698 pF
Reverse transfer capacitance	Crss	34 pF
Reverse recovery charge	Qrr	48 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.1 g
Marking	Marking	Type
Thermal resistance junction	RTH	2.5 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	50 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	175 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	80 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	104 mA/V
Intrinsic gate resistance	RGi	1 Ω