DI100N04D1
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI100N04D1 MOSFET, DPAK, N, 40V, 100A, 4mΩ, 175°C
Minimum order quantity	2.500
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption 7(a)-I
REACH	declarable
Lead free	No
Halogen free	No

Article number	DI100N04D1

Type	SMD
Package	TO-252AA/D-PAK
Qualification	Industrial Grade
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	40 V

Drain current 25°C	ID	100 A
On-resistance 1	RDSon1	0.004 Ω
	@ ID	30 A
	@ VGS	10 V
Drain current 100°C	ID	73 A
On-resistance 2	RDSon2	0.005 Ω
	@ ID	20 A
	@ VGS	4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	83.3 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	Yes
Peak drain current	IDM	450 A
	@ tp	null µs
Threshold voltage	VGSth min	1.2 V
	VGSth max	2.5 V
Turn-on delay time	tD(on)	40 ns
Rise time	tr	63 ns
Turn-off delay time	tD(off)	37 ns
Fall time	tf	9 ns
Total gate charge (10V)	Qg (10V)	143 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	28 nC
Single pulse avalanche energy	Eas	164 mJ
Input capacitance	Ciss	7000 pF
Output capacitance	Coss	549 pF
Reverse transfer capacitance	Crss	404 pF
Reverse recovery charge	Qrr	13 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.32 g
Marking	Marking	Type
Thermal resistance junction	RTH	1.8 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	35 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	175 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	40 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	60 mA/V
Intrinsic gate resistance	RGi	0.5 Ω