DI081N06PQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI081N06PQ MOSFET, PowerQFN 5x6, N, 60V, 80A, 150°C
Minimum order quantity	5.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption 7(a)-I
REACH	declarable
Lead free	No
Halogen free	No

Article number	DI081N06PQ

Type	SMD
Package	PowerQFN 5x6
Qualification	Industrial Grade
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	60 V

Drain current 25°C	ID	80 A
On-resistance 1	RDSon1	0.008 Ω
	@ ID	15 A
	@ VGS	4.5 V
Drain current 100°C	ID	50 A
On-resistance 2	RDSon2	0.0042 Ω
	@ ID	20 A
	@ VGS	10 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	32.9 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	No
Peak drain current	IDM	320 A
	@ tp	100 µs
Threshold voltage	VGSth min	1.2 V
	VGSth max	2.5 V
Turn-on delay time	tD(on)	6.5 ns
Rise time	tr	8 ns
Turn-off delay time	tD(off)	38 ns
Fall time	tf	16 ns
Total gate charge (10V)	Qg (10V)	30 nC
Total gate charge (4.5V)	Qg (4.5V)	13 nC
Gate-drain charge	Qgd	5 nC
Single pulse avalanche energy	Eas	121 mJ
Input capacitance	Ciss	2140 pF
Output capacitance	Coss	850 pF
Reverse transfer capacitance	Crss	60 pF
Reverse recovery charge	Qrr	45 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.1 g
Marking	Marking	Type
Thermal resistance junction	RTH	3.8 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	62.5 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	60 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	TBA mA/V
Intrinsic gate resistance	RGi	TBA Ω