DI070N01PTK
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI070N01PTK MOSFET, PowerQFN 3x3, N, 12V, 70A, 3.8mΩ, 175°C
Minimum order quantity	5.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	DI070N01PTK

Type	SMD
Package	PowerQFN 3x3
Qualification	Industrial Grade
Config	Single Protected
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

ESD protection	ESD protected	Yes
Polarity	pol	N
Drain source voltage	VDS	12 V

Drain current 25°C	ID	70 A
On-resistance 1	RDSon1	0.0038 Ω
	@ ID	20 A
	@ VGS	4.5 V
Drain current 100°C	ID	49 A
On-resistance 2	RDSon2	0.0051 Ω
	@ ID	10 A
	@ VGS	2.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	50 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	Yes
Peak drain current	IDM	210 A
	@ tp	10000 µs
Threshold voltage	VGSth min	0.3 V
	VGSth max	1 V
Turn-on delay time	tD(on)	8 ns
Rise time	tr	19 ns
Turn-off delay time	tD(off)	73 ns
Fall time	tf	80 ns
Total gate charge (10V)	Qg (10V)	0 nC
Total gate charge (4.5V)	Qg (4.5V)	65 nC
Gate-drain charge	Qgd	12 nC
Single pulse avalanche energy	Eas	0 mJ
Input capacitance	Ciss	3212 pF
Output capacitance	Coss	432 pF
Reverse transfer capacitance	Crss	368 pF
Reverse recovery charge	Qrr	6 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.1 g
Marking	Marking	Type
Thermal resistance junction	RTH	3.3 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	62.5 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	175 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	10 µA
	@ VGS	8 V
Drain source leakage current	IDSS	1 µA
	@ VDS	12 V
Gate source voltage DC	VGSS	8 V
Gate source voltage ESD	VGSS	2000 V
Forward transconductance	gfs	47 mA/V
Intrinsic gate resistance	RGi	1.6 Ω