DI065N06PT
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI065N06PT MOSFET, PowerQFN 3x3, N, 65V, 65A, 5mΩ, 150°C
Minimum order quantity	5.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	DI065N06PT

Type	SMD
Package	PowerQFN 3x3
Qualification	Industrial Grade
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	65 V

Drain current 25°C	ID	65 A
On-resistance 1	RDSon1	0.005 Ω
	@ ID	20 A
	@ VGS	10 V
Drain current 100°C	ID	41 A
On-resistance 2	RDSon2	0.0075 Ω
	@ ID	15 A
	@ VGS	4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	39 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	Yes
Peak drain current	IDM	300 A
	@ tp	10000 µs
Threshold voltage	VGSth min	1.2 V
	VGSth max	2.5 V
Turn-on delay time	tD(on)	15 ns
Rise time	tr	26 ns
Turn-off delay time	tD(off)	15 ns
Fall time	tf	3 ns
Total gate charge (10V)	Qg (10V)	37 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	10 nC
Single pulse avalanche energy	Eas	65 mJ
Input capacitance	Ciss	1617 pF
Output capacitance	Coss	504 pF
Reverse transfer capacitance	Crss	0 pF
Reverse recovery charge	Qrr	22 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.1 g
Marking	Marking	3E6N044
Thermal resistance junction	RTH	3.2 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	62.5 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	16 V
Drain source leakage current	IDSS	1 µA
	@ VDS	54 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	29 mA/V
Intrinsic gate resistance	RGi	1.1 Ω