DI060N06PQ-Q
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI060N06PQ-Q MOSFET, PowerQFN 5x6, N, 60V, 60A, 7mΩ, 150°C
Minimum order quantity	5.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption
REACH	not declarable
Lead free	No
Halogen free	Yes

Article number	DI060N06PQ-Q

Type	SMD
Package	PowerQFN 5x6
Qualification	AEC-Q compliant
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	60 V

Drain current 25°C	ID	60 A
On-resistance 1	RDSon1	0.007 Ω
	@ ID	20 A
	@ VGS	10 V
Drain current 100°C	ID	43 A
On-resistance 2	RDSon2	null Ω
	@ ID	null A
	@ VGS	null V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	70 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	Yes
Peak drain current	IDM	170 A
	@ tp	10000 µs
Threshold voltage	VGSth min	2 V
	VGSth max	4 V
Turn-on delay time	tD(on)	8 ns
Rise time	tr	2 ns
Turn-off delay time	tD(off)	29 ns
Fall time	tf	4 ns
Total gate charge (10V)	Qg (10V)	27 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	10 nC
Single pulse avalanche energy	Eas	320 mJ
Input capacitance	Ciss	1700 pF
Output capacitance	Coss	345 pF
Reverse transfer capacitance	Crss	8 pF
Reverse recovery charge	Qrr	48 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.1 g
Marking	Marking	Type
Thermal resistance junction	RTH	1.78 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	50 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	20 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	35 mA/V
Intrinsic gate resistance	RGi	4.6 Ω