DI056N10D2-Q
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI056N10D2-Q MOSFET, D2PAK, N, 100V, 56A, 13 mOhm
Minimum order quantity	800
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption 7(a)-I
REACH	declarable
Lead free	No
Halogen free	No

Article number	DI056N10D2-Q

Type	SMD
Package	TO-263AB/D2PAK
Qualification	AEC-Q compliant
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	100 V

Drain current 25°C	ID	56 A
On-resistance 1	RDSon1	0.0095 Ω
	@ ID	15 A
	@ VGS	10 V
Drain current 100°C	ID	34 A
On-resistance 2	RDSon2	0.013 Ω
	@ ID	10 A
	@ VGS	4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	57.6 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	Yes
Peak drain current	IDM	200 A
	@ tp	10000000 µs
Threshold voltage	VGSth min	1.5 V
	VGSth max	2.5 V
Turn-on delay time	tD(on)	15 ns
Rise time	tr	16 ns
Turn-off delay time	tD(off)	15 ns
Fall time	tf	4 ns
Total gate charge (10V)	Qg (10V)	38 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	11 nC
Single pulse avalanche energy	Eas	70.5 mJ
Input capacitance	Ciss	1685 pF
Output capacitance	Coss	307 pF
Reverse transfer capacitance	Crss	24 pF
Reverse recovery charge	Qrr	38 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.32 g
Marking	Marking	Type
Thermal resistance junction	RTH	2.6 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	80 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	29 mA/V
Intrinsic gate resistance	RGi	0.8 Ω