DI048N08PQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI048N08PQ MOSFET, PowerQFN 5x6, N, 80V, 48A, 6.5mΩ, 150°C
Minimum order quantity	5.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption 7(a)-I
REACH	declarable
Lead free	No
Halogen free	No

Article number	DI048N08PQ

Type	SMD
Package	PowerQFN 5x6
Qualification	Industrial Grade
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	80 V

Drain current 25°C	ID	48 A
On-resistance 1	RDSon1	0.0065 Ω
	@ ID	20 A
	@ VGS	10 V
Drain current 100°C	ID	42.5 A
On-resistance 2	RDSon2	0.0085 Ω
	@ ID	20 A
	@ VGS	4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	56.8 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	Yes
Peak drain current	IDM	120 A
	@ tp	10000 µs
Threshold voltage	VGSth min	1.3 V
	VGSth max	2.3 V
Turn-on delay time	tD(on)	8 ns
Rise time	tr	21 ns
Turn-off delay time	tD(off)	19 ns
Fall time	tf	45 ns
Total gate charge (10V)	Qg (10V)	35 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	7 nC
Single pulse avalanche energy	Eas	25.6 mJ
Input capacitance	Ciss	1812 pF
Output capacitance	Coss	903 pF
Reverse transfer capacitance	Crss	53 pF
Reverse recovery charge	Qrr	45 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.1 g
Marking	Marking	6284
Thermal resistance junction	RTH	2.2 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	0.8 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	38 mA/V
Intrinsic gate resistance	RGi	0.8 Ω