DI048N04PQ-AQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI048N04PQ-AQ MOSFET, PowerQFN 5x6, N, 40V, 48A, 8mΩ, 150°C, AEC-Q101
Minimum order quantity	5.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption 7(a)-I
REACH	declarable
Lead free	No
Halogen free	No

Article number	DI048N04PQ-AQ

Type	SMD
Package	PowerQFN 5x6
Qualification	AEC-Q101
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	40 V

Drain current 25°C	ID	48 A
On-resistance 1	RDSon1	0.008 Ω
	@ ID	12 A
	@ VGS	10 V
Drain current 100°C	ID	30 A
On-resistance 2	RDSon2	9.5 Ω
	@ ID	10 A
	@ VGS	4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	28 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	Yes
Peak drain current	IDM	200 A
	@ tp	10000 µs
Threshold voltage	VGSth min	1 V
	VGSth max	2.5 V
Turn-on delay time	tD(on)	17 ns
Rise time	tr	30 ns
Turn-off delay time	tD(off)	17 ns
Fall time	tf	2 ns
Total gate charge (10V)	Qg (10V)	48 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	9 nC
Single pulse avalanche energy	Eas	33 mJ
Input capacitance	Ciss	2270 pF
Output capacitance	Coss	170 pF
Reverse transfer capacitance	Crss	120 pF
Reverse recovery charge	Qrr	6 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.1 g
Marking	Marking	Type
Thermal resistance junction	RTH	3.5 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	50 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	175 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	40 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	24 mA/V
Intrinsic gate resistance	RGi	1.3 Ω