DI045N10PT-AQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI045N10PT-AQ MOSFET, PowerQFN 3x3, N, 100 V, 45 A, 9.5 mΩ, 150°C, AEC-Q101
Minimum order quantity	5.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	DI045N10PT-AQ

Type	SMD
Package	PowerQFN 3x3
Qualification	AEC-Q101
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	100 V

Drain current 25°C	ID	45 A
On-resistance 1	RDSon1	0.01 Ω
	@ ID	15 A
	@ VGS	10 V
Drain current 100°C	ID	28 A
On-resistance 2	RDSon2	0.013 Ω
	@ ID	10 A
	@ VGS	4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	54 W
	@ TLoc	25 °C
	Location	Junction
Avalanche	No
Peak drain current	IDM	200 A
	@ tp	10000 µs
Threshold voltage	VGSth min	1.2 V
	VGSth max	2.5 V
Turn-on delay time	tD(on)	TBA ns
Rise time	tr	TBA ns
Turn-off delay time	tD(off)	TBA ns
Fall time	tf	TBA ns
Total gate charge (10V)	Qg (10V)	TBA nC
Total gate charge (4.5V)	Qg (4.5V)	TBA nC
Gate-drain charge	Qgd	TBA nC
Single pulse avalanche energy	Eas	TBA mJ
Input capacitance	Ciss	TBA pF
Output capacitance	Coss	TBA pF
Reverse transfer capacitance	Crss	TBA pF
Reverse recovery charge	Qrr	TBA nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.1 g
Marking	Marking	Type
Thermal resistance junction	RTH	2.3 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	60 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	25 V
Drain source leakage current	IDSS	1 µA
	@ VDS	80 V
Gate source voltage DC	VGSS	25 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	TBA mA/V
Intrinsic gate resistance	RGi	TBA Ω