DI040N03PT
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI040N03PT MOSFET, PowerQFN 3x3, N, 30V, 40A, 6mΩ, 175°C
Minimum order quantity	5.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	DI040N03PT

Type	SMD
Package	PowerQFN 3x3
Qualification	Industrial Grade
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	30 V

Drain current 25°C	ID	40 A
On-resistance 1	RDSon1	0.006 Ω
	@ ID	15 A
	@ VGS	10 V
Drain current 100°C	ID	34 A
On-resistance 2	RDSon2	0.011 Ω
	@ ID	10 A
	@ VGS	4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	30 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	Yes
Peak drain current	IDM	140 A
	@ tp	10000 µs
Threshold voltage	VGSth min	1 V
	VGSth max	2.5 V
Turn-on delay time	tD(on)	13 ns
Rise time	tr	71 ns
Turn-off delay time	tD(off)	13 ns
Fall time	tf	21 ns
Total gate charge (10V)	Qg (10V)	null nC
Total gate charge (4.5V)	Qg (4.5V)	12 nC
Gate-drain charge	Qgd	6 nC
Single pulse avalanche energy	Eas	100 mJ
Input capacitance	Ciss	1120 pF
Output capacitance	Coss	140 pF
Reverse transfer capacitance	Crss	105 pF
Reverse recovery charge	Qrr	1 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.1 g
Marking	Marking	Type
Thermal resistance junction	RTH	5 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	175 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	20 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	15 mA/V
Intrinsic gate resistance	RGi	1.6 Ω