DI030N10PT-AQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI030N10PT-AQ MOSFET, PowerQFN 3x3, N, 100V, 30A, 119mΩ, 175°C, AEC-Q101
Minimum order quantity	5.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	DI030N10PT-AQ

Type	SMD
Package	PowerQFN 3x3
Qualification	AEC-Q101
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	100 V

Drain current 25°C	ID	30 A
On-resistance 1	RDSon1	0.119 Ω
	@ ID	5 A
	@ VGS	10 V
Drain current 100°C	ID	32 A
On-resistance 2	RDSon2	0.14 Ω
	@ ID	4 A
	@ VGS	4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	37.5 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	Yes
Peak drain current	IDM	120 A
	@ tp	10000 µs
Threshold voltage	VGSth min	1 V
	VGSth max	2.2 V
Turn-on delay time	tD(on)	7 ns
Rise time	tr	15 ns
Turn-off delay time	tD(off)	25 ns
Fall time	tf	6 ns
Total gate charge (10V)	Qg (10V)	23 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	6 nC
Single pulse avalanche energy	Eas	39 mJ
Input capacitance	Ciss	1310 pF
Output capacitance	Coss	180 pF
Reverse transfer capacitance	Crss	136 pF
Reverse recovery charge	Qrr	3 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.1 g
Marking	Marking	M310N
Thermal resistance junction	RTH	4 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	62.5 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	175 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	100 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	TBA mA/V
Intrinsic gate resistance	RGi	1.2 Ω